The self-destruct button on this Gen4 NVMe SSD might destroy all user data, but it's for the best.

 

The INDUSTRIAL P250Q Self-Destruct SSD, a revolutionary storage device that combines an independent destruction circuit with a hardware and software-based data-erasure mechanism, was unveiled by Team Group this week. Because of this dual-mode destruction strategy, the drive most recently took home the 2025 COMPUTEX Best Choice Award in the Cyber Security Category.

According to Team Group, companies that depend on software-only wipes frequently have interrupted or insufficient erasing during power outages. In order to ensure hardware-level deletion, Team Group's solution incorporates a proprietary destruction circuit that targets the Flash IC directly and is patented under Taiwan Utility Model Patent: M662727.

The Team group further notes that a "intelligent software system" automatically detects and resumes erasure following an outage, helping to protect proprietary, classified, or private data so that recovery is impossible even in the event of outages.

Even if this isn't for consumers, it's still a really intriguing product because we might have comparable implementations for ordinary users in the future.

The P250Q's hardware includes multi-stage LED indications and a one-click activation button. IT support and other operators may verify erasure without the need for specialized equipment thanks to these LEDs' real-time feedback on progress from initial commands to ultimate completion.

An overview of the drive's data deletion features is as follows:
  • Self-destruct activation with a single click
  • Intelligent erasing in two modes (hardware and software)
  • Targeting the Flash IC, a secure independent destruction circuit
  • Erasure by auto-resume following a power outage
  • LED indicators with multiple stages for real-time progress

The full technical specs of the P250Q M.2 SSD are given below:

SpecificationDetails
ModelP250Q-M80 M.2 PCIe SSD
Form FactorM.2 2280
Interface & ProtocolPCIe Gen4×4, NVMe 1.4
Capacities256 GB / 512 GB / 1 TB / 2 TB
Flash Memory112-Layer 3D TLC NAND
Sequential Performance
  • Read: up to 7,000 MB/s
  • Write: up to 5,500 MB/s
Endurance & Reliability
  • MTBF: > 3 million hours
  • P/E Cycles: 3K P/E Cycles
  • Endurance: (not specified)
Shock Resistance
  • Operating: 50 G / 11 ms (MIL-STD-202G, Cond. A)
  • Non-operating: 1,500 G / 0.5 ms (MIL-STD-883K, Cond. B)
Vibration Resistance
  • Operating: 7.69 Grms, 20–2,000 Hz random (MIL-STD-810G)
  • Non-operating: 4.02 Grms, 15–2,000 Hz sine (MIL-STD-810G)
Operating Temperature0 °C to 70 °C
Storage Temperature–40 °C to 85 °C

Humidity

5% ~ 95%

The product link and the official press release are available at the source links below.

In addition to launching the P250Q, Team Group reports that it has obtained a U.S. invention patent under "US 12283335 B2" for its wide-temperature M.2 SSD technology. According to reports, this maintains steady functioning in ambient temperatures between 85 °C and 105 °C without throttling by dynamically adjusting data transmission rates across three thermal zones.

Source: TeamGroup (link1link2), Computex (via Google Patents)
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